SST4403 / MMST4403 / 2N4403
Transistors
Rev.B
1/3
PNP Medium Power Transistor
(Switching)
SST4403 / MMST4403 / 2N4403
Features
1) BV
CEO
=
-
40V (Min.) ; at I
C
=
-
1mA
2) Complements the SST4401 / MMST4401 / PN4401
Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST4403
SST3
R2X
T116
3000
MMST4403
SMT3
R2X
T146
3000
2N4403
TO-92
-
T93
3000
Absolute maximum ratings (Ta=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
-
40
-
40
-
6
-
0.6
0.625
150
-
55 to +150
Unit
V
V
V
A
Collector power
dissipation
P
C
0.2
0.35
W
W
W
C
C
2N4403
SST4403
MMST4403
SST4403
MMST4403
Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE
+ +
External dimensions (Unit : mm)
SST4403
MMST4403
2N4403
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
0 to 0.1
0.2Min.
2.4
0.2
1.3
0.95
0.45
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+0.2
+ 0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
0 to 0.1
2.8
0.2
1.6
0.3 to 0.6
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+ 0.2
+ 0.1
-
0.06
+ 0.1
-
0.05
(2)
(1)
(3)
4.8
0.2
(12.7Min.)
3Min.
4.8
0.2
3.7
0.2
5
0.45
0.1
2.3
0.5
0.1
2.5+ 0.3
-
0.1
(1)
(2)
(3)
All terminals have the same
dimensions
All terminals have the same
dimensions
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
-
40
-
40
-
5
-
-
-
-
-
-
-
-
-
-
-
0.1
-
0.1
V
V
V
A
A
I
C
=
-
100
A
I
C
=
-
1mA
I
E
=
-
100
A
V
CB
=
-
35V
V
EB
=
-
5V
-
-
-
1.3
Base-emitter saturation voltage
V
BE(sat)
-
0.75
-
-
0.95
V
-
-
-
0.75
I
C
/I
B
=
-
500mA/
-
50mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
-
0.4
V
I
C
/I
B
=
-
150mA/
-
15mA
I
C
/I
B
=
-
500mA/
-
50mA
I
C
/I
B
=
-
150mA/
-
15mA
20
-
-
100
-
300
DC current transfer ratio
h
FE
100
-
-
-
60
-
-
30
-
-
V
CE
=
-
1V, I
C
=
-
0.1mA
V
CE
=
-
1V, I
C
=
-
1mA
V
CE
=
-
1V, I
C
=
-
10mA
V
CE
=
-
1V, I
C
=
-
150mA
V
CE
=
-
2V, I
C
=
-
500mA
Transition frequency
Collector output capacitance
f
T
Cob
200
-
-
-
-
8.5
MHz
pF
V
CE
=
-
10V, I
E
=20mA, f=100MHz
V
CB
=
-
10V, f
=100kHz
Emitter input capacitance
Cib
-
-
30
pF
V
EB
=
-
0.5V, f
=100kHz
Delay time
td
-
-
15
ns
V
CC
=
-
30V, V
EB(OFF)
=
-
2V, I
C
=
-
150mA, I
B1
=
-
15mA
V
CC
=
-
30V, V
EB(OFF)
=
-
2V, I
C
=
-
150mA, I
B1
=
-
15mA
Rise time
tr
-
-
20
ns
Storage time
tstg
-
-
225
ns
V
CC
=
-
30V, I
C
=
-
150mA, I
B1
=
-
I
B2
=
-
15mA
V
CC
=
-
30V, I
C
=
-
150mA, I
B1
=
-
I
B2
=
-
15mA
Fall time
tf
-
-
30
ns
SST4403 / MMST4403 / 2N4403
Transistors
Rev.B
2/3
Electrical characteristic curves
0
50
100
10
0
5
1
B
=0
A
100
200
400
500
600
300
Ta=25C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
0.1
10
1.0
100
1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs. collector current ( I )
Ta=25C
V
CE
=10V
1V
1.0
10
100
1000
0.8
0.6
0.2
1.2
1.0
1.4
1.8
1.6
0.4
0
BASE-EMITTER SATURATION VOLTAGE : V
BE (sat)
(V)
Ta=25C
I
C
/ I
B
=10
COLLECTOR CURRENT : I
C
(mA)
Fig.2 Base-emitter saturation
voltage vs. collector current
0.1
10
1.0
100
1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector current ( II )
Ta=125C
Ta=25C
Ta=
-
55C
V
CE
=10V
0.1
10
1.0
100
1000
100
1000
10
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 AC current gain vs. collector current
Ta=25C
V
CE
=10V
f=1kHz
1.0
10
100
1000
0.2
0.3
0.1
0
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Ta=25C
I
C
/
I
B
=10
SST4403 / MMST4403 / 2N4403
Transistors
Rev.B
3/3
1.0
10
100
1000
0.8
1.2
1.4
1.8
1.6
0.4
0.2
0.6
1.0
0
BASE
-
EMITTER ON VOLTAGE : V
BE(on)
(V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.7 Grounded emitter propagation
characteristics
Ta=25C
V
CE
=10V
1
10
100
1000
100
1000
10
CURRENT GAIN
-
BANDWIDTH PRODUCT : f
T
(MHz)
COLLECTOR CURRENT : I
C
(
mA)
Fig.8 Gain bandwidth product
vs. collector current
Ta=25C
V
CE
=10V
1
10
100
1000
10
1
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.9 Gain bandwidth product
Ta=25C
100MHz
200MHz
200MHz
300MHz
250MHz
0.1
1
10
100
10
100
1
CAPACITANCE (
pF)
REVERSE BIAS VOLTAGE (
V)
Fig.10 Input /output capacitance
vs. voltage
Ta=25C
f=1MHz
Cib
C
ob
1
10
100
1000
100
1000
10
TURN ON TIME : ton
(ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.11 Turn-on time vs.collector
current
Ta=25C
I
C
/
I
B
=10
V
CC
=30V
10V
1
10
100
1000
100
500
5
10
RISE TIME : t
r
(ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.12 Rise time vs. collector
current
Ta=25C
V
CC
=30V
I
C
/ I
B
=10
1
10
100
1000
100
1000
10
STORAGE TIME : ts
(ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.13 Storage time vs. collector
current
Ta=25C
V
CC
=30V
I
C
=10I
B1
=10I
B2
1
10
100
1000
100
1000
10
FALL TIME : tf
(ns)
COLLECTOR CURRENT : I
C
(
mA)
Fig.14 Fall time vs. collector
current
Ta=25C
V
CC
=30V
I
C
=10I
B1
=10I
B2
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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